Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

摘要

We report an approach to achieve low-resistance contacts to MoS2 transistorswith the intrinsic performance of the MoS2 channel preserved. Through a drytransfer technique and a metal-catalyzed graphene treatment process,nickel-etched-graphene electrodes were fabricated on MoS2 that yield contactresistance as low as 200 ohm-um. The substantial contact enhancement (~2 ordersof magnitude) as compared to pure nickel electrodes, is attributed to the muchsmaller work function of nickel-graphene electrodes, together with the factthat presence of zigzag edges in the treated graphene surface enhancestunneling between nickel and graphene. To this end, the successful fabricationof a clean graphene-MoS2 interface and a low resistance nickel-grapheneinterface is critical for the experimentally measured low contact resistance.The potential of using graphene as an electrode interlayer demonstrated in thiswork paves the way towards achieving high performance next-generationtransistors.